Related papers: Multi-photon schemes for mid-infrared detection
In$_2$Se$_3$ in the three-dimensional (3D) hexagonal crystal structure with space group $P6_1$ ($\gamma$-In$_2$Se$_3$) has a direct band gap of $\sim$1.8 eV and high absorption coefficient, making it a promising semiconductor material for…
We show a large enhancement of two-photon absorption processes in nanocrystal quantum dots and of light upconversion efficiency from the IR to the near-IR spectral regime, using a hybrid optical device in which near-IR emitting InAs quantum…
Recently, black phosphorus (BP) has joined the two dimensional material family as a promising candidate for photonic applications, due to its moderate bandgap, high carrier mobility, and compatibility with a diverse range of substrates.…
We have carried out an ultrahigh-field cyclotron resonance study of p-type In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T were…
Between the absorption and the emission spectral lineshapes of dense atomic and molecular media, such as dye solutions and alkali-noble buffer gas mixtures at high pressure, in many cases there exists a universal scaling, the…
Coherent interconversion of signals between optical and mechanical domains is enabled by optomechanical interactions. Extreme light-matter coupling produced by confining light to nanoscale mode volumes can then access single mid-infrared…
The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
Atomically-resolved Z-contrast and strain mappings are used to extract a model of the composition of an InGaAs/InAlAs asymmetric coupled quantum-well structure grown on InP using metal-organic vapor phase epitaxy. The model accounts for…
We present a microscopic explanation of the controversially discussed transient negative differential transmission observed in degenerate optical pump-probe measurements in graphene. Our approach is based on the density matrix formalism…
Aims. We present a 0.2--200 keV broad-band study of absorbed AGN observed with INTEGRAL, XMM-Newton, Chandra and ASCA to investigate the continuum shape and the absorbing/reflecting medium properties. Methods. The sources are selected in…
A full set of calculations is presented for inner-shell n = 2 to 3 photoexcitation of the 16 iron charge states: Fe I through Fe XVI. The blend of the numerous absorption lines arising from these excitations (mainly 2p - 3d) forms an…
We investigate quantum spectroscopy with undetected photons for protein detection in the mid-infrared spectral region. Classical Fourier-transform infrared spectroscopy of protein samples (bovine serum albumin and N-terminal pro-brain…
We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $\beta$-Ga$_2$O$_3$. A two-photon absorption scheme is used to photoexcite carriers with the pump pulse and free-carrier absorption of the probe pulse is…
Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructures: ScxGa1-xN/GaN and ScxAl1-xN/AlN grown by molecular beam…
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
Transient absorption microscopy measures excited-state kinetics based on the imaginary part of the pump-induced perturbation to the complex refractive index, i.e. $\Im \{\Delta\mathcal N\}$, with applications in both materials and…
Bose-Einstein condensation is a phenomenon well known for material particles as cold atomic gases, and this concept has in recent years been extended to photons confined in microscopic optical cavities. Essential for the operation of such a…
Sensing with undetected photons has become a vibrant, application-driven research domain with a special focus on the mid-infrared (mid-IR) wavelength region. Since the mid-IR contains spectral bands with highly specific and strong molecular…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…