Related papers: Non-volatile superconducting tunnelling magnetores…
We present experimental results and macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM).…
We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…
If a computer could be assembled from superconducting components, the energy efficiency would far surpass that of conventional electronics. Historic research efforts towards this goal yielded pivotal breakthroughs in the development and…
In quantum computing architectures, one important factor is the trade-off between the need to couple qubits to each other and to an external drive and the need to isolate them well enough in order to protect the information for an extended…
We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We…
Heat management and refrigeration are key concepts for nanoscale devices operating at cryogenic temperatures. The design of an on-chip mesoscopic refrigerator that works thanks to the input heat is presented, thus realizing a solid state…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the…
The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a new device…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
One of the biggest challenges in implementation of Quantum circuits or Photonic Integrated Circuits in general is the inability to create efficient relay devices due to small decoherence time, high delays and poor interconnections that…
The ongoing discoveries of graphene-based superconductors underscore the quest to understand the structure of new superconducting orders. We develop a theory that facilitates the use of the quantum twisting microscope (QTM) for that…
Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on…
Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable…
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the…
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…
We experimentally demonstrate the operation of a Josephson magnetic random access memory unit cell, built with a Ni_80Fe_20/Cu/Ni pseudo spin-valve Josephson junction with Nb electrodes and an integrated readout SQUID in a fully planarized…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…