Related papers: Memristive Switches in Rigid Conjugated Single-Mol…
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS…
Molecular electronics break-junction experiments are widely used to investigate fundamental physics and chemistry at the nanoscale. Reproducibility in these experiments relies on measuring conductance on thousands of freshly formed…
Hybrid ionic-electronic conductors have the potential to generate memory effects and neuronal behavior. The functionality of these mixed materials depends on ion motion through thin polarizable channels. Here, we explore different…
We report a theoretical study suggesting a novel type of electronic switching effect, driven by the geometrical reconstruction of nanoscale graphene-based junctions. We considered junction struc- tures which have alternative metastable…
The proposed protocol is an attempt to meet the experimentalists' legitimate desire of reliably and easily extracting microscopic parameters from current-voltage measurements on molecular junctions. It applies to junctions wherein charge…
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study the switching mechanisms in two-dimensional (2D)…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Reversible opto-mechanical molecular switch based on a single azobenzene molecule suspended via thiolate links between realistic models of gold tips is investigated. Using a combination of the transfer matrix technique and density…
The coupling of superconducting systems to mechanical resonators is an emerging field, with wide reaching implications including high precision sensing and metrology. Experimental signatures of this coupling have so far been small, seldom…
We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…
The dynamics of a molecular junction consisting of a PTCDA molecule between the tip of a scanning tunneling microscope and a Ag(111) surface have been investigated experimentally and theoretically. Repeated switching of a PTCDA molecule…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
Novel electronic systems displaying exotic physical properties can be derived from complex topological materials through chemical doping. MoTe$_2$, the candidate type-II Weyl semimetal shows dramatically enhanced superconductivity up to 4.1…
Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
Neuromorphic computing circuits can be realized using memristors based on low-dimensional materials enabling enhanced metal diffusion for resistive switching. Here, we investigate memristive properties of vertically aligned MoS$_2$…
Simplified model for current-voltage characteristics of weak links is suggested. It is based on an approach considering the multiple Andreev reflection in metallic Josephson junction. The model allows to calculate current-voltage…