Related papers: Anisotropic spin-valley coupling in SiMOS and Si/S…
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
We propose a novel approach to explore the properties of a quantum dot in the presence of the spin-orbit interaction and in a tilted magnetic field. The spin-orbit coupling within the quantum dot manifest itself as anti-crossing of the…
Motivated by the recent Ge hole spin qubit experiments, we construct and study a two-leg spin ladder from a quantum dot array with spin-orbit couplings (SOCs), aiming to uncover the many-body phase diagrams and provide concrete guidance for…
The spin-orbit coupling in the absence of spatial inversion symmetry plays an important role in realizing intriguing electronic states in solids, such as topological insulators and unconventional superconductivity. Usually, the inversion…
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and…
InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary…
The electronic structure of surfaces and interfaces plays a key role in the properties of quantum devices. Here, we study the electronic structure of realistic Al/InAs/Al heterojunctions using a combination of density functional theory…
On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promising host material because one can enhance the spin coherence…
Measuring the magnetoresistance (MR) of ultraclean {\it GaAs} two-dimensional holes in a large $r_s$ range of 20-50, two striking behaviors in relation to the spin-orbit coupling (SOC) emerge in response to strong electron-electron…
We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…
The understanding of the fundamentals of spin and charge densities and currents interconversion by spin-orbit coupling can enable efficient applications beyond the possibilities offered by conventional electronics. For this purpose we…
We have studied spin-flip transitions between Zeeman sublevels in GaAs electron quantum dots. Several different mechanisms which originate from spin-orbit coupling are shown to be responsible for such processes. It is shown that…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum…
The transport of quantum information between different nodes of a quantum device is among the challenging functionalities of a quantum processor. In the context of spin qubits, this requirement can be met by coherent electron spin shuttling…
We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We…
Using first-principles density-functional theory (DFT) calculations, we investigate the 4/3-monolayer structure of Pb on the Si(111) or Ge(111) surface within the two competing structural models termed the H$_3$ and T$_4$ structures. We…
The spin-orbit coupling (SOC) interactions, electron correlation effects and Hund coupling cooperate and compete with each other, leading to novel properties, quantum phase and non-trivial topological electronic behavior in iridium oxides.…
We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…