Related papers: Anisotropic spin-valley coupling in SiMOS and Si/S…
Single nuclear spins in silicon are a promising resource for quantum technologies due to their long coherence times and excellent control fidelities. Qubits and qudits have been encoded on donor nuclei, with successful demonstrations of…
Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promising method of achieving this is through the light-matter…
Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader…
We study the influence of spin-orbit coupling on the hole states in InAs/GaAs quantum dots grown on [001]- and [111]-oriented substrates belonging to symmetry point groups: C2v, C3v and D2d. We investigate the impact of various spin-orbit…
We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We…
We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden…
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be…
(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and…
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…
Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits…
Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may…
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation…
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that…
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from further improvement of critical material properties such as the…
The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…