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Three dimensional (3D) topological insulators are quantum materials with a spin-orbit induced bulk insulating gap that exhibit quantum-Hall-like phenomena in the absence of applied magnetic fields. The proposed applications of topological…

Mesoscale and Nanoscale Physics · Physics 2009-07-20 Y. Xia , D. Qian , D. Hsieh , R. Shankar , H. Lin , A. Bansil , A. V. Fedorov , D. Grauer , Y. S. Hor , R. J. Cava , M. Z. Hasan

The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…

Mesoscale and Nanoscale Physics · Physics 2018-10-10 Lauryn Wu , Kunming Gu , Qiliang Li

Unlike time-reversal topological insulators, surface metallic states with Dirac cone dispersion in the recently discovered topological crystalline insulators (TCIs) are protected by crystal symmetry. To date, TCI behaviors have been…

2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…

The interface between the two band insulators SrTiO3 and LaAlO3 unexpectedly has the properties of a two dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which…

Strongly Correlated Electrons · Physics 2016-07-19 E. Maniv , M. Ben Shalom , A. Ron , M. Mograbi , A. Palevski , M. Goldstein , Y. Dagan

We show that in some transition metal dichalcogenides, minority regions of the cleaved sample surfaces show - unexpectedly and anomalously - a finite number of 2D electronic states instead of the expected 3D valence bands. In the case of…

Strongly Correlated Electrons · Physics 2024-07-01 Matthew D. Watson , Mihir Date , Alex Louat , Niels B. M. Schröter

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host…

Using first-principles density-functional theory (DFT) calculations, we investigate the 4/3-monolayer structure of Pb on the Si(111) or Ge(111) surface within the two competing structural models termed the H$_3$ and T$_4$ structures. We…

Computational Physics · Physics 2016-09-21 Xiao-Yan Ren , Hyun-Jung Kim , Seho Yi , Yu Jia , Jun-Hyung Cho

Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a…

Topological insulators are characterized by the existence of band inversion and the possibility of the realization of surface states. Doping with a magnetic atom, which is a source of the time-reversal symmetry breaking, can lead to…

Materials Science · Physics 2020-11-17 Andrzej Ptok , Konrad Jerzy Kapcia , Anna Ciechan

We present an analysis of bulk and surface electronic structures of thallium based ternary III-V-VI$_2$ series of compounds TlMQ$_2$, where M=Bi or Sb and Q=S, Se or Te, using the ab initio density functional theory framework. Based on…

Mesoscale and Nanoscale Physics · Physics 2012-09-27 Bahadur Singh , Ashutosh Sharma , H. Lin , M. Z. Hasan , R. Prasad , A. Bansil

We theoretically demonstrate how competition between band inversion and spin-orbit coupling (SOC) results in nontrivial evolution of band topology, taking antiperovskite Ba$_3$SnO as a prototype material. A key observation is that when the…

Mesoscale and Nanoscale Physics · Physics 2017-11-22 Toshikaze Kariyado , Masao Ogata

Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction…

Despite serious effort, the nature of the magnetic interactions and the role of electron-correlation effects in magnetic two-dimensional (2D) van der Waals materials remain elusive. Using CrI$_3$ as a model system, we show that the…

Materials Science · Physics 2021-02-04 Liqin Ke , Mikhail I. Katsnelson

Topological Surface States (TSS) represent new types of two dimensional electron systems with novel and unprecedented properties distinct from any quantum Hall-like or spin-Hall effects. Their Z$_2$ topological order can be realized at room…

Mesoscale and Nanoscale Physics · Physics 2014-01-07 M. Zahid Hasan , Su-Yang Xu , David Hsieh , L. Andrew Wray , Yuqi Xia

The spin-helical surface states in three-dimensional topological insulator (TI), such as Bi2Se3, are predicted to have superior efficiency in converting charge current into spin polarization. This property is said to be responsible for the…

Materials Science · Physics 2016-08-03 Jia Zhang , Julian P. Velev , Xiaoqian Dang , Evgeny Y. Tsymbal

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…

Spin-orbit coupling (SOC) lifts molecular orbital degeneracy, enabling bi-level electronic platforms suitable for next-generation digital devices. However, common light-atom molecular feedstocks exhibit weak SOC due to the absence of heavy…

Materials Science · Physics 2025-05-07 Zihao Wang , Wan-Lu Li , Shaowei Li

Three-dimensional topological insulators are an important class of modern materials, and a strong spin-orbit coupling is involved in making the bulk electronic states very different from those near the surface. Bi$_2$Se$_3$ is a model…

Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted…

Mesoscale and Nanoscale Physics · Physics 2018-03-07 G. H. Cao , H. J. Liu , J. H. Liang , L. Cheng , D. D. Fan , Z. Y. Zhang