Related papers: X-ray Response of the Fully-Depleted, p-Channel Si…
We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
The first generation of Single electron Sensitive Read Out (SiSeRO) amplifiers, employed as on-chip charge detectors for charge-coupled devices (CCDs) have demonstrated excellent noise and spectral performance: a responsivity of around 800…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD)…
Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will…
Low noise CCDs fully-depleted up to 675 micrometers have been identified as a unique tool for Dark Matter searches and low energy neutrino physics. The charge collection efficiency (CCE) for these detectors is a critical parameter for the…
We introduce the fully-depleted charge-coupled device (CCD) as a particle detector. We demonstrate its low energy threshold operation, capable of detecting ionizing energy depositions in a single pixel down to 50 eVee. We present results of…
In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…
We characterize the response of a novel 250 $\mu$m thick, fully-depleted Skipper Charged-Coupled Device (CCD) to visible/near-infrared light with a focus on potential applications for astronomical observations. We achieve stable,…
A high spectral resolution observation of the diffuse X-ray background in the 60 - 1000 eV energy range has been made using an array of thirty-six 1 mm^2 micro-calorimeters flown on a sounding rocket. Detector energy resolution ranged from…
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates.…
A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…
We demonstrate so-called repetitive non-destructive readout (RNDR) for the first time on a Single electron Sensitive Readout (SiSeRO) device. SiSeRO is a novel on-chip charge detector output stage for charge-coupled device (CCD) image…
We report on the assessment of the imaging performance of CITIUS -- a high-speed X-ray detector developed for the large-scale synchrotron radiation facility SPring-8-II -- for heavy charged particles and neutrons. To characterize the…
We demonstrate the effectiveness of two techniques for using x-rays to evaluate the amount of charge diffusion in charge coupled devices (CCDs). We quantify the degree of charge diffusion with two parameters: sigma_d, the standard deviation…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
Using 2.0 cm x 2.0 cm x 0.5 cm Cadmium Telluride (CdTe) substrates from the company Acrorad, we have fabricated detectors with planar cathode contacts and 8x8 anode pixels. We investigate the I-V characteristics and energy resolution of the…