Related papers: Shining light on short-range atomic ordering in se…
Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be…
Nitrogen (N) is a key alloying element that enhances the performance of Fe-Ni-Cr austenitic stainless steels, improving austenite stability, corrosion resistance, and yield strength. However, the role of N in modifying chemical ordering,…
Self-consistent electronic structure calculations together with a structural model are used to study the effect of short-range atomic order on the optical properties of otherwise random Al(0.5)Ga(0.5)As, Ga(0.5)In(0.5)P, and…
Alloying stands out as a pivotal technological method employed across various compounds, be they metallic, magnetic, or semiconducting, serving to fine-tune their properties to meet specific requirements. Ternary semiconductors represent a…
We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…
To describe chemical ordering in solid solutions systems Warren-Cowley short-range parameters are ordinarily used. However, they are not directly suited for application to long-range ordered systems, as they do not converge to zero for…
The exceptional mechanical strengths of medium and high-entropy alloys have been attributed to hardening in random solid solutions. Here, we evidence non-random chemical mixings in CrCoNi alloys, resulting from short range ordering. A novel…
The electronic and optical properties of (Zn,Mg)(S,Se) wide-gap solid solutions are studied using ab initio techniques and starting from the previously determined atomistic structure of the alloy. Compositional disorder is shown to close…
The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this…
We investigate the properties of electronic states and optical transitions in hexagonal GaAs quantum dots within AlGaAs nanowires. Such dots are particularly interesting due to their high degree of symmetry. A streamlined postsymmetrization…
The coupling of strength to short-range order (SRO) in the CrCoNi medium entropy alloy remains actively investigated, with conflicting reports supporting and opposing SRO-induced strengthening continuing to emerge. A direct observation of…
Amorphous solids exhibit structural short-range order despite lacking long-range crystalline order, with this structural descriptor found to be important for determining mechanical properties. Nanobeam electron diffraction offers a…
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…
SiAlON is a prominent example of systems suitable as hosts for creating materials for light-emitting diodes (LEDs). In this work, the electronic structure of a series of semiordered and disordered SiAlON systems is investigated by means of…
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an…
Entropy-stabilized oxides (ESOs), driven by high configurational entropy, have gained phenomenological research interest due to their potential for tailoring structure property relationships. However, the chemical short range ordering (SRO)…
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…
We present an ab-initio formalism for the calculation of transport properties in compositionally disordered systems within the framework of the Korringa-Kohn-Rostoker non-local coherent potential approximation. Our formalism is based upon…
The structure of evaporated amorphous Ge$_x$Sb$_x$Te$_{100-2x}$ ($x =$ 6, 9, 13) alloys was investigated by neutron diffraction, X-ray diffraction and extended X-ray absorption spectroscopy (EXAFS) at the Ge, Sb and Te K-edges. Large scale…
I present a theory of electron dynamics in semiconductors with slowly varying composition. I show that the frequency-dependent conductivity, required for the description of transport and optical properties, can be obtained from a knowledge…