Related papers: Cd(Zn)O on SiC: epsilon-near-zero modes and plasmo…
Zero-index metamaterials (ZIMs) offer unprecedented ways to manipulate the flow of light, and are of interest for wide range of applications including optical cloaking, super-coupling, and unconventional phase-matching properties in…
Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. ZnO…
RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…
We experimentally demonstrate efficient third harmonic generation from an indium tin oxide (ITO) nanofilm (lambda/42 thick) on a glass substrate for a pump wavelength of 1.4 um. A conversion efficiency of 3.3x10^-6 is achieved by exploiting…
The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding…
Epsilon-near-zero (ENZ) thin films facilitate strong light-matter interactions with a widespread impact in nonlinear, quantum and thermal photonics. Here, we extend the scope of thin film ENZ modes by elucidating the generalized polaritonic…
In recent years element doping has been extensively employed to modulate the physicochemical properties of semiconductors. In this work, new Pure ZnO and ZnO-xCdS composite nanofibers synthesized through the electrospinning technique, where…
LaTiO$_{3+\delta/2}$, NdTiO$_{3+\delta/2}$, and Nd$_{1-x}$Sr$_{x}$TiO$_{3+\delta/2}$ thin films have been epitaxially grown on (100)SrTiO$_{3}$ and (100)LaAlO$_{3}$ single crystal substrates by using the pulsed laser deposition technique.…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any…
We envision the use of an indium tin oxide (ITO) thin film as part of a bi-layered silicon-photonics subwavelength device to boost nonlinearity-assisted all-passive nonreciprocal behavior. The asymmetric p-polarized oblique excitation of a…
The ZnO films, 25 nm thick were deposited by e-beam evaporation of ZnO (99.9%) pellets onto native oxide covered silicon (100) substrates. Details of the interface chemical composition and the chemical depth profile have been deduced as…
Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with…
Recently, materials with vanishingly small permittivity, known as epsilon-near-zero (ENZ) media, emerged as promising candidates to achieve nonlinear optical effects of unprecedented magnitude on a solid-state platform. In particular, the…
New perspective cubic quasi-alloys CdO/MgO short period superlattices were grown on sapphire substrates by plasma assisted molecular beam epitaxy. Their crystal quality was characterized using High Resolution X-ray Diffraction (HRXRD) and…
NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along [0001]-direction on (0001)sapphire surface as expected.…
Thin InN and GaN/InN films were grown on oxygen-polar (O) (000-1) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the growth rate (GR) and the substrate polarity on the growth…
Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of…
Cr-doped ZnO films were fabricated by a new but feasible method, that is, annealing Cr-Zn layers deposited via DC magnetron sputtering in air. Microstructures of the films were investigated using X-ray diffraction, scanning electron…
We report on strong coupling of the charge carrier plasmon $\omega_{PL}$ in graphene with the surface optical phonon $\omega_{SO}$ of the underlying SiC(0001) substrate with low electron concentration ($n=1.2\times 10^{15}$ $cm^{-3}$) in…