English

Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem

Materials Science 2011-03-22 v1 Mesoscale and Nanoscale Physics Strongly Correlated Electrons

Abstract

We report on strong coupling of the charge carrier plasmon ωPL\omega_{PL} in graphene with the surface optical phonon ωSO\omega_{SO} of the underlying SiC(0001) substrate with low electron concentration (n=1.2×1015n=1.2\times 10^{15} cm3cm^{-3}) in the long wavelength limit (q0q_\parallel \rightarrow 0). Energy dependent energy-loss spectra give for the first time clear evidence of two coupled phonon-plasmon modes ω±\omega_\pm separated by a gap between ωSO\omega_{SO} (q0q_\parallel \rightarrow 0) and ωTO\omega_{TO} (q>>0q_\parallel >> 0), the transverse optical phonon mode, with a Fano-type shape, in particular for higher primary electron energies (E020eVE_0 \ge 20eV). A simplified model based on dielectric theory is able to simulate our energy - loss spectra as well as the dispersion of the two coupled phonon-plasmon modes ω±\omega_\pm. In contrast, Liu and Willis [1] postulate in their recent publication no gap and a discontinuous dispersion curve with a one-peak structure from their energy-loss data.

Keywords

Cite

@article{arxiv.1008.1130,
  title  = {Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem},
  author = {R. J. Koch and Th. Seyller and J. A. Schaefer},
  journal= {arXiv preprint arXiv:1008.1130},
  year   = {2011}
}

Comments

4 pages, 3 figures, presented during Graphene Week 2010, Maryland University, College Park, Maryland, USA, April 19-23, 2010