Related papers: Modeling key characteristics of high-efficiency ga…
Since the photoconversion efficiency $\eta$ of the silicon-based solar cells (SCs) under laboratory conditions is approaching the theoretical fundamental limit, further improvement of their performance requires theoretical modeling and/or…
We analysed self-consistently photoconversion efficiency of direct-gap A3B5 semicon-ductors based solar cells and optimised their main physical characteristics. Using gallium ar-senide (GaAs) as the example and new efficient optimization…
To accurately calculate efficiencies $\eta$ of experimentally produced multijunction solar cells (MJSCs) and optimize their parameters, we offer semi-analytical photoconversion formalism that incorporates radiative recombination,…
The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) is performed for n-type and p-type bases. The case is considered when the Shockley-Read-Hall recombination in the silicon bulk is…
The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with long Shockley-Reed-Hall lifetime is calculated theoretically taking into account the concentration gradient of excess electron-hole pairs in…
We develop a new approach to calculate the obtainable limit of photoconversion efficiency of tandem solar cells (SCs) and applied it to SCs with both vertical and lateral designs at AM0 and AM1.5 conditions. To get the maximum efficiency,…
Solar energy is the most convenient and reliable energy source among all renewable energy resources and an efficient photovoltaic device is required to convert this energy into utilizable energy. Different types of solar cells (SC) are…
The radiative recombination, Shokley-Read recombination, frontal-surface and rear-surface recombination and the recombination at the heterojunction boundaries and the recombination in the space charge region are considered in the…
The spectral response of quantum well solar cells (QWSCs) is well understood. We describe work on QWSC dark current theory which combined with SR theory yields a system efficiency. A methodology published for single quantum well (SQW)…
The thickness dependences of the photocurrent quantum yield and photoenergy parameters of silicon backside contact solar cells (BC SC) are investigated theoretically and experimentally. The surface recombination rate on the irradiated…
The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a stack of strain-compensated GaSb/GaAs type-II QDs. We…
Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the…
We calculate the band structure of a two-dimensional GaAs/AlGaAs superlattice and estimate the ultimate efficiency of solar cells using this type of structure for solar energy conversion. The superlattice under consideration consists of…
Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this…
This paper proposes an efficient three-layered p-GaAs/p-CIGS/n-CdS (PPN), a unique solar cell architecture. Copper indium gallium selenide (CIGS)-based solar cells exhibit substantial performance than the ones utilizing cadmium sulfide…
The results of our researches of the influence of exponentially distributed surface centers on the effective surface recombination rate and the parameters of silicon solar cells (SCs) are reported. In our calculations, we assumed the…
In this paper, we have designed and investigated the performance of radial GaAs/AlGaAs pin junction nanocone array solar cells by performing coupled optoelectronic simulations to obtain the most optimal design configuration based on its…
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…
Drift-diffusion model is an indispensable modeling tool to understand the carrier dynamics (transport, recombination, and collection) and simulate practical-efficiency of solar cells (SCs) through taking into account various carrier…
A theoretical approach to photoconversion efficiency modeling in perovskite p-i-n structures is developed. The results of this modeling compare favorably with the experiment and indicate that the surfaces of the perovskite solar cells (SCs)…