Related papers: Strain-Engineered Deterministic Quantum Dots for T…
A hybrid system of a semiconductor quantum dot single photon source and a rubidium quantum memory represents a promising architecture for future photonic quantum repeaters. One of the key challenges lies in matching the emission frequency…
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed…
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…
On-demand entangled photon pairs at telecom wavelengths are crucial for quantum communication, distributed quantum computing, and quantum-enhanced sensing and metrology. The O-band is particularly advantageous because of its minimal…
Single-photon emitters integrated in optical micro-cavities are key elements in quantum communication applications. However, optimizing their emission properties and achieving efficient cavity coupling remain significant challenges. In this…
InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different…
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer…
We present an atomistic investigation of the influence of strain on the electronic properties of quantum dots (QD's) within the empirical $s p^{3} s^{*}$ tight-binding (ETB) model with interactions up to 2nd nearest neighbors and spin-orbit…
A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obtained with a combination of atomistic strain and…
Highly coherent quantum emitters operating in the telecommunication C-band (1530 - 1565nm), where ultra-low-loss fibers and photonic circuits are available, are crucial to the development of scalable quantum technologies. In this work, we…
Building a quantum internet requires efficient and reliable quantum hardware, from photonic sources to quantum repeaters and detectors, ideally operating at telecommunication wavelengths. Thanks to their high brightness and single-photon…
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles,…
We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime…
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…
A practical way to link separate nodes in quantum networks is to send photons over the standard telecom fibre network. This requires sub-Poissonian photon sources in the telecom wavelength band around 1550 nm, where the photon coherence…
Quantum emitters (QEs) in two-dimensional transition metal dichalcogenides (2D TMDCs) have advanced to the forefront of quantum communication and transduction research due to their unique potentials in accessing valley pseudo-spin degree of…
Large-scale quantum networks rely on optical fiber networks and photons as so-called flying qubits for information transport. While dispersion and absorption of optical fibers are minimum at the infrared telecom wavelengths, most atomic and…
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
The development of quantum relays for long haul and attack-proof quantum communication networks operating with weak coherent laser pulses requires entangled photon sources at telecommunication wavelengths with intrinsic single-photon…