Related papers: Increasing valley splitting in Si/SiGe by practica…
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
In Si(111) crystals, a strong biaxial tensile strain applied within the (111) plane is considered to shift the lowest energy point of the conduction band from the $\Delta$ valley to the L valley. Electrons confined in this L valley…
Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…
Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable and uncontrollable behaviour. However, when combined with the…
Scattering rate calculations in two-dimensional Si/SiGe systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces, however, may exhibit diffuse Ge profiles either by design or as a…
The electronic structure for a strained Si/SiGe quantum well grown on a tilted substrate with periodic steps is calculated using a parameterized tight-binding method. For a zero tilt angle the energy difference between the two lowest minima…
The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunneling microscope…
Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…
Monolayer transition-metal dichalcogenides possess a pair of degenerate helical valleys in the band structure that exhibit fascinating optical valley polarization. Optical valley polarization, however, is limited by carrier lifetimes of…
Degeneracy of discrete energy levels of finite-length, metallic single-wall carbon nanotubes depends on type of nanotubes, boundary condition, length of nanotubes and spin-orbit interaction. Metal-1 nanotubes, in which two non-equivalent…
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…
The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the…
The valley splitting of the first few Landau levels is calculated as a function of the magnetic field for electrons confined in a strained silicon quantum well grown on a tilted SiGe substrate, using a parameterized tight-binding method.…
Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is annealed at high temperature for a long time are known to exhibit…
The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for…