Related papers: Nanostructuring SiC by sequential plasma oxidation…
Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum…
Nowadays, microelectronics and nanoelectronics require the search for new materials, including masks for creating structures. Today, the intermediate hard mask strategy is one of the key issues in achieving a good balance between…
High resolution resistors capable of detecting minuscule currents are vital for advanced sensors, but existing off-shelf models struggle with inconsistent resistance under varying voltages. The underlying physics of this issue is rooted in…
During the dielectric breakdown process of thin solid-state nanopores, the application of high voltages may cause the formation of multi-nanopores on one chip, which number and sizes are important for their applications. Here, simulations…
Embedding silicon nanoparticles in an intermetallic matrix is a promising strategy to produce remarkable bulk anode materials for lithium-ion (Li-ion) batteries with low potential, high electrochemical capacity and good cycling stability.…
Since the pioneering work of S.Y. Chou et al.[1] Nano Imprint Lithography (NIL) has emerged as a promising technique for surface patterning, opening for numerous applications ranging from nanophotonics[2] to microfluidics[3]. NIL basically…
Nanostructured surfaces are known to provide excellent optical properties for various photonics devices. Fabrication of such nanoscale structures to germanium (Ge) surfaces by metal assisted chemical etching (MACE) is, however, challenging…
The shape of metal nanoparticles embedded in dielectric matrices influences the optical properties of the composite material. Swift heavy ion irradiation can induce a controllable shape transformation in gold and other metals embedded in…
Nanoscale, single-asperity wear of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM)…
We have reported nanopattern formation on carbon thin film and Si(100) surfaces by low energy inert and carbon ion beams. It is interesting to observe the role of carbon as target as well as projectile for nano patterning. Using carbon thin…
Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date…
CLIC is a proposed linear $e^+e^-$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark, Higgs boson and Beyond Standard Model physics. In addition to spatial resolutions of a few micrometers and a…
In this work is comprising of simulation results of amorphous Si (a-Si) solar cell, in which ITO was used as an anti-reflection coating (ARC). The thickness of ITO was optimized (65 nm) to achieve better performance for spectral region of…
In this paper, we demonstrate strip-loaded guiding optical components realized on a 27 nm ultra-thin SOI platform. The absence of physically etched boundaries within the guiding core suppresses majorly the scattering loss, as shown by us…
Silicon Carbide (SiC) optical constants are fundamental inputs for radiative transfer models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical…
The photon trapping nano-structures help to enhance quantum efficiency and reduce reflection for MSM photodetector that allows fast Si photodetectors at wavelength 800-950nm. The nanostructure consist of micro holes reduces reflection and…
The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of…
Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 ohm.cm and 0.02 ohm.cm) in hydrofluoric (HF) acid of 24.5 precent…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…