Related papers: Flat-Band Generation in InAs/GaSb Quantum Wells th…
The interplay of hopping parameters that can give rise to flat bands in consequence of quantum interference in electronic, photonic, and other interesting materials has become an extensively studied topic. Most of the recognized structures…
Graphene based nanostructures exhibit flat electronic energy bands in their single-particle spectrum. We consider interacting electrons in flat bands of zig-zag nanoribbons. We present a protocol for flat-band projection that yields…
In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices:…
Flat band networks are characterized by coexistence of dispersive and flat bands. Flat bands (FB) are generated by compact localized eigenstates (CLS) with local network symmetries, based on destructive interference. Correlated disorder and…
We propose a new principle to realize flatbands which are robust in real materials, based on a network superstructure of one-dimensional segments. This mechanism is naturally realized in the nearly commensurate charge-density wave of…
Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the…
Flat-bands play a central role in the presence of correlated phases in Moir\'e and other modulated two dimensional systems. In this work, flat-bands are shown to exist in uniaxially periodic strained graphene. Such strain should be produced…
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…
Correlated flat bands and altermagnetism are two important directions in quantum materials, centred respectively on interaction-dominated phases and symmetry-enforced spin-textured states, yet both derive from lattice symmetry and orbital…
Band engineering in twisted bilayers of the five generic two-dimensional Bravais networks is demonstrated. We first derive symmetry-based constraints on the interlayer coupling, which helps us to predict and understand the shape of the…
Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as…
Moir\'e superlattices in van der Waals heterostructures provide a tunable platform to study emergent properties that are absent in the natural crystal form. Twisted bilayer transition metal dichalcogenides (TB-TMDs) can host moir\'e flat…
We construct quasi one-dimensional topological and non-topological three-band lattices with tunable band gap and winding number of the flat band. Using mean field (MF) and exact density matrix renormalization group (DMRG) calculations, we…
With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
Photonic flat bands are crucial for enabling strong localization of light and enhancing light-matter interactions, as well as tailoring the angular distribution of emission from photonic structures. These unique properties open pathways for…
Since the inception of moir\'e quantum matter, a foundational tenet of the field has been that the quantum geometry of emergent flat bands is faithfully inherited from the low-energy valleys of the constituent monolayers. Here, we…
Motivated by recent experiments demonstrating the creation of atomically sharp interfaces between hexagonal sapphire and cubic SrTiO$_3$ with finite twist, we here develop and study a general electronic band theory for this novel class of…
Dispersionless bands -- \emph{flatbands} -- provide an excellent testbed for novel physical phases due to the fine-tuned character of flatband tight-binding Hamiltonians. The accompanying macroscopic degeneracy makes any perturbation…
Epitaxially-grown semiconductor heterostructures give the possibility to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily…