English

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

Materials Science 2022-05-18 v2 Mesoscale and Nanoscale Physics

Abstract

In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring doping, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion.

Keywords

Cite

@article{arxiv.2112.15548,
  title  = {Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands},
  author = {Rajibul Islam and Barun Ghosh and Giuseppe Cuono and Alexander Lau and Wojciech Brzezicki and Arun Bansil and Amit Agarwal and Bahadur Singh and Tomasz Dietl and Carmine Autieri},
  journal= {arXiv preprint arXiv:2112.15548},
  year   = {2022}
}

Comments

19 pages, 16 figures. Paper accepted in Physical Review Research