Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Z. Y. Wang; X. Guo; H. D. Li; T. L. Wong; N. Wang; M. H. Xie

doi:10.1063/1.3610971

Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Mesoscale and Nanoscale Physics 2015-05-28 v1 Materials Science

Authors: Z. Y. Wang , X. Guo , H. D. Li , T. L. Wong , N. Wang , M. H. Xie

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Abstract

Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs.

Keywords

superlattices Bi2Se3 In2Se3 molecular-beam epitaxy topological insulator quantum size effects hetero-interfaces

Cite

@article{arxiv.1106.0580,
  title  = {Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties},
  author = {Z. Y. Wang and X. Guo and H. D. Li and T. L. Wong and N. Wang and M. H. Xie},
  journal= {arXiv preprint arXiv:1106.0580},
  year   = {2015}
}

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