Related papers: Quantum electrometry in a silicon carbide power de…
Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular,…
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of…
The in-beam tests of two Si pixel type TRACE detectors have been performed at Laboratori Nazionali di Legnaro (Italy). The aim was to investigate the possibility of identifying heavy-ion reactions products with mass A~10 at low kinetic…
Accurate calibration of coherent optical receivers is essential for reliable performance assessment in coherent communications, precision and quantum sensing, and continuous-variable quantum key distribution (CV-QKD), where the effective…
The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by…
A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…
Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As…
We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This…
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for…
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers are of particular interest for detection and response to…
A conceptual set-up for measuring the electric field in silicon detectors by electro-optical imaging is proposed. It is based on the Franz-Keldysh effect which describes the electric field dependence of the absorption of light with an…
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has…
The silicon-vacancy center in diamond holds great promise as a qubit for quantum communication networks. However, since the optical transitions are located within the visible red spectral region, quantum frequency conversion to low-loss…
In this work we study, theoretically, electronic mobility of the silicon carbide semiconductor in the 3C phase, named 3C-SiC. 3C-SiC has shown great potential for applications in extreme conditions. Thus, the study of the electronic…
Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R\&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow…
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…
Levitated optomechanics is an emerging field in quantum science that explores the quantum motion of mesoscopic particles levitated in a vacuum. Expanding this approach to particles with intrinsic quantum defects opens new opportunities for…
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum…
Superconducting integrated circuit (SIC) is a promising "beyond-CMOS" device technology enables speed-of-light, nearly lossless communications to advance cryogenic (4 K or lower) computing. However, the lack of large-area superconducting IC…
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material.…