Related papers: Sliding Ferroelectricity Driven Spin-Layertronics …
We propose alterelectricity, an electrical analogue of altermagnetism, in which two switchable states possess alternating band structures. Such alterelectric states arise when a switchable sublattice-selective structural change connects two…
Twistronics is a powerful strategy to engineer novel quantum states by controlling the relative orientation between layered materials. Here, we demonstrate that an orthogonally twisted bilayer CrPS$_4$ shows $d$-wave altermagnetism driven…
Two-dimensional (2D) ferroelectrics, which is rare in nature, enable high-density non-volatile memory with low energy consumption. Here, we propose a theory of bilayer stacking ferroelectricity (BSF), in which, two stacked layers of the…
Magnetoelectric multiferroics are highly sought after for applications in low-power electronics and for advancing fundamental research, including axion insulators and dark matter detection. However, achieving a combination of ferroic spin…
Two-dimensional altermagnets exhibit exceptional potential for low-power spintronics via nonrelativistic spin splitting and zero net magnetization. Here, we systematically investigate the influence of interlayer interactions on the…
Recent studies highlight the scientific importance and broad application prospects of two-dimensional (2D) sliding ferroelectrics, which prevalently exhibit vertical polarization with suitable stackings. It is crucial to understand the…
Altermagnetic materials combine compensated magnetic order with momentum-dependent spin splitting, offering a fundamentally new route for spintronic functionality beyond conventional ferromagnets and antiferromagnets. While most studies…
Sliding ferroelectrics built from stacked nonpolar monolayers enable out-of-plane polarization and unconventional switching via interlayer sliding, yet the microscopic sliding dynamics remain unclear. Using machine-learning molecular…
Electrical control of spin and magnetic sublattice degrees of freedom is essential for multifunctional and low-power spintronic devices. Bipolar altermagnetic semiconductors (BAMSs)-characterized by opposite spin polarizations at the…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Altermagnets are a novel class of fully spin-compensated magnetic materials that nevertheless have spin-split electronic bands, offering novel perspectives for spintronics applications. Based on a rigorous analysis of altermagnetic…
The coupling of spin and valley physics is nowadays regarded as a promising route toward next-generation spintronic and valleytronic devices. In the aim of engineering functional properties for valleytronic applications, we focus on the…
The discovery of collinear symmetric-compensated altermagnets (AM) with intrinsic spin splitting provides a route towards energy-efficient and ultrafast device applications. Here, using first-principles calculations and symmetry analysis,…
The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…
Developing new multiferroics at the two-dimensional (2D) limit with energy-efficient magnetoelectric coupling can inform the interplay physics of novel orders and advance on-chip high-performance computing applications. Here we apply…
Altermagnets are an emergent class of materials combining features of ferro- and antiferro-magnetic materials. They have spin-separated bands normally associated with ferromagnets, but a vanishing net magnetization. Moreover the symmetries…
Interlayer stacking order has recently emerged as a unique degree of freedom to control crystal symmetry and physical properties in two-dimensional van der Waals (vdW) materials and heterostructures. By tuning the layer stacking pattern,…
Materials combining electrically switchable ferroelectricity and tunable topological states hold significant promise for advancing both foundamental quantum phenomena and innovative device architectures. Here, we employ first-principles…
Vertical ferroelectricity where a net dipole moment appears as a result of in-plane ionic displacements has gained enormous attention following its discovery in transition metal dichalcogenides. Based on first-principles calculations, we…
Altermagnetism -a magnetic state characterized by spin-polarized electronic bands at zero net magnetization- offers a promising route for next-generation spintronic devices. In two-dimensional (2D) magnets, twist engineering enables its…