Related papers: First-principles identification of optically effic…
Systematic uncertainties in accelerator oscillation neutrino experiments arise mostly from nuclear models describing neutrino-nucleus interactions. To mitigate these uncertainties, we can study neutrino-nuclei interactions with detectors…
We develop an atomistic, nearest-neighbor sp3s* tight-binding Hamiltonian to investigate the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model we calculate that the incorporation of dilute concentrations of Bi…
Co-doping of Ce-doped LaBr$_3$ with Ba, Ca, or Sr improves the energy resolution that can be achieved by radiation detectors based on these materials. Here, we present a mechanism that rationalizes of this enhancement that on the basis of…
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent…
The formation and electronic properties of nitrogen-related defect complexes in $\beta-Ga_2O_3$ are investigated using first-principles calculations. Starting from the energetically favorable $N_{i9}-N_{OI}$ configuration, nitrogen atoms…
The effect of magnetron power on the room temperature 1.54 $\mu$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon…
Cubic Y$_{2}$Ti$_{2}$O$_{7}$ single crystals doped with Er$^{3+}$ and Yb$^{3+}$ ions have been studied by the methods of electron spin resonance (ESR) and selective laser spectroscopy. ESR spectra exhibit signals from rare-earth ions that…
The integration of 2D nanomaterials with silicon is expected to enrich the applications of 2D functional nanomaterials and to pave the way for next-generation, nanoscale optoelectronics with enhanced performances. Herein, a strategy for…
It was recently shown that the energy resolution of Ce-doped LaBr$_3$ scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here we outline a mechanism for this enhancement on the basis of electronic…
Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available…
ZnO is co-doped with Na+ and Si4+ in the ratio 2:1. The ratio was intentionally chosen so that net valence state of dopant theoretically matches that of host. This is to avoid dependence in the amount of oxygen vacancies/interstitials…
We report here a general theory describing photoelectron transportation dynamics in GaAs semiconductor photocathodes. Gradient doping is incorporated in the model through the inclusion of directional carrier drift. The time-evolution of…
The kinetics of the charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes (OLEDs) was quantified by transient electroluminescence (EL). Three sets of dye molecules, such as derivatives of naphthalimide…
We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all…
A novel concept for electroluminescence (EL) structures was recently proposed. In it, a wavelength-shifting material is deposited inside the holes of GEM-like structures which, after suitable optical treatment of its electrodes, improves…
The excitation efficiency and external luminescence quantum efficiency of trivalent Eu3+ ions doped into gallium nitride (GaN) was studied under optical and electrical excitation. For small pump fluences it was found that the excitation of…
Determining the types and concentrations of vacancies present in intentionally doped GaN is a notoriously difficult and long-debated problem. Here we use an unconventional approach, based on thermal transport modeling, to determine the…
Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) light-emitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium…
Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in flexible miniaturized electronic devices. Indeed, heteroatom…
The fabrication of Er-doped ZrO2-based nanocrystalline phase-separated silica optical preforms by the MCVD and solution doping techniques is presented. Fabricated preform cores are nearly transparent and contain phase-separated rare-earth…