Related papers: Room-temperature magnetic p-n junctions for charge…
We study the electronic states of the magnetically ordered Mn3Pt alloy within the density functional theory. Mn3Pt has been believed that one third of Mn atoms have no magnetic moment in an antiferromagnetic phase (so-called the F-phase)…
We present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field…
The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
We show that the chiral modes in circular graphene $pn$ junctions provide an advantage for spin manipulation via spin-orbit coupling compared to semiconductor platforms. We derive the effective Hamiltonian for the spin dynamics of the…
Here, we report spin-selective transport and exceptionally large positive junction magnetoresistance (JMR) in sputter-deposited Mn$_2$CoAl/native-SiO$_2$/p-Si heterostructures. Highly ordered inverse-Heusler Mn$_2$CoAl thin films with…
A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are…
We investigate Meissner effect in normal metal/superconductor junctions where the interface is spin-active. We find that orbital magnetic susceptibility of the normal metal shows highly nontrivial behaviors. In particular, the magnetic…
The paramagnetic Meissner effect (PME) measured in high $T_{C}$ granular superconductors has been attributed to the presence of $\pi$-junctions between the grains. Here we present measurements of complex AC magnetic susceptibility from…
The electronic origin of a large resistance change in nanoscale junctions incorporating spin crossover molecules is demonstrated theoretically by using a combination of density functional theory and the non-equilibrium Green's functions…
Motivated by a recent experiment of Song \emph{et al.} [Science {\bf 332}, 1410 (2011)], we theoretically study the spin dynamics, charge dynamics, and point-contact Andreev-reflection spectroscopy (PCARS) of two-band iron-based…
A combination of synchrotron X-ray, neutron powder diffraction, magnetization, heat capacity and electrical resistivity measurements reveals that NdMnAsO is an antiferromagnetic semiconductor with large Neel temperature (TN = 359(2) K). At…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…
We present a finite-temperature theory of the anisotropic spin-spin correlations in magnetic metallic monolayers, deposited on a suitable substrate. The `spins' are the local moments set up by the itinerant electrons, and the key concept is…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
We demonstrate that the magnetization in magnetic semiconductors exhibits nutational motion when subjected to an external magnetic field. This behavior originates from the splitting of the conduction-electron band which induces anisotropic,…
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias…
Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between…
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra…
Three-dimensional (3D) magnetic nanostructures offer a versatile platform for exploring complex spin textures and spin-wave (SW) dynamics, with implications in next-generation spintronic and magnonic technologies. Advances in 3D…