Related papers: Scalable tight-binding model for strained graphene
We investigate bilayer graphene systems with layer switching domain walls separating the two energetically equivalent Bernal stackings in the presence of an external magnetic field. To this end we calculate quantum transport and local…
Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based…
We propose the use of 2-dimensional Penning trap arrays as a scalable platform for quantum simulation and quantum computing with trapped atomic ions. This approach involves placing arrays of micro-structured electrodes defining static…
We consider superconducting properties of a two-dimensional Dirac material such as graphene under strain that produces a flat band spectrum in the normal state. We show that in the superconducting state, such a model results in a highly…
In this article, we propose a new numerical model for computation of the transport of electrons in a graphene device. The underlying quantum model for graphene is a massless Dirac equation, whose eigenvalues display a conical singularity…
We present a tight binding theory of the Dirac point resonances due to adsorbed atoms and molecules on an infinite 2D graphene sheet based on the standard tight binding model of the graphene p-band electronic structure and the extended…
An analytical study of low-energy electronic excited states in an uniformly strained graphene is carried out up to second-order in the strain tensor. We report an new effective Dirac Hamiltonian with an anisotropic Fermi velocity tensor,…
We employ dual-gated 30{\deg}-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a…
We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations:…
In recent years, materials with topological flat bands have attracted significant attention due to their association with extraordinary transport properties and strongly correlated electrons. Yet, generic principles linking lattice…
The general covariance of the Dirac equation is exploited in order to explore the curvature effects appearing in the electronic properties of graphene. Two physical situations are then considered: the weak curvature regime, with…
Electrons in quantum materials exhibiting coexistence of dispersionless (flat) bands piercing dispersive (steep) bands can give rise to strongly correlated phenomena, and are associated with unconventional superconductivity. It is known…
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the…
The extreme mechanical resilience of graphene and the peculiar coupling it hosts between lattice and electronic degrees of freedom have spawned a strong impetus towards strain-engineered graphene where, on the one hand, strain augments the…
A transfer matrix approach is used to study the electronic transport in graphene superlattices with long-range correlated barrier spacements. By considering the low-energy electronic excitations as massless Dirac fermions, we compute by…
Patterning graphene with a spatially-periodic potential provides a powerful means to modify its electronic properties. Dramatic effects have been demonstrated in twisted bilayers where coupling to the resulting moir\'e-superlattice yields…
Achieving structural superlubricity in graphitic samples of macro-scale size is particularly challenging due to difficulties in sliding large contact areas of commensurate stacking domains. Here, we show the presence of macro-scale…
Bernal-stacked bilayer graphene (BLG) provides an ideal basis for gate-controlled, and free of etching, electronic devices. Theoretical modeling of realistic devices is an essential part of research, however, simulations of large-scale BLG…
Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…
We describe the lattice deformation in graphene under strain effect by considering the spacial-momenta coordinates do not commute. This later can be realized by introducing the star product to end up with a generalized Heisenberg algebra.…