Related papers: Identifying field-tunable surface resonance states…
The electronic structure of Sb(110) is studied by angle-resolved photoemission spectroscopy and first-principle calculations, revealing several electronic surface states in the projected bulk band gaps around the Fermi energy. The…
It is well-known that the electric field can induce phase transitions between superconducting, metallic and insulating states in thin-film materials due to its control of the charge carrier density. Since a similar effect on the charge…
Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is…
We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We…
Phonon modes within pristine crystalline resonators now routinely reach the quantum ground state. Such systems are attractive for quantum information science applications, as advanced fabrication and processing can enable relatively long…
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar…
Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based interconnects face a critical challenge, that their resistivity…
Rhombohedral multilayer graphene has recently emerged as a rich platform for studying correlation driven magnetic, topological and superconducting states. While most experimental efforts have focused on devices with N$\leq 9$ layers, the…
We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus…
It is shown that the quasiparticle states localized in the vicinity of surface imperfections of atomic size can be responsible for the zero-bias tunneling conductance peaks in high-Tc superconductors. The contribution from these states can…
Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP…
The contribution of bulk and surface to the electrical resistance along crystallographic \textit{b}- and \textit{c}-axes as a function of crystal thickness gives evidence for a temperature independent surface states in an antiferromagnetic…
We study the tunneling current between edge states of quantum Hall liquids across a single long contact region, and predict a resonance at a bias voltage set by the scale of the edge velocity. For typical devices and edge velocities…
In 2D materials, the quantum confinement and van der Waals-type interlayer interactions largely govern the fundamental electronic and optical properties, and the dielectric screening plays a dominant role in the excitonic properties. This…
Based on first-principles calculations and tight-binding model analysis, we propose that black phosphorus (BP) can host a three-dimensional topological node-line semimetal state under pressure when spin-orbit coupling (SOC) is ignored. A…
We consider different effects that arise when time-reversal symmetry breaking superconductors are subjected to an external magnetic field, thus rendering the superconductor to be in the mixed state. We focus in particular on two…
We theoretically investigate phosphorene zigzag nanorribons as a platform for constriction engineering. In the presence of a constriction at the upper edge, quantum confinement of edge protected states reveals resonant tunnelling…
For the IV-VI semiconductor family we derive an exact relation between the microscopic gap edge wave functions of the bulk insulator and the Dirac-Weyl topological surface state wave function, thus obtaining a fully microscopic surface…
It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this…
High-performance infrared photodetection underpins various applications spanning surveillance, environmental monitoring, optical communications and biomedical imaging. However, conventional bulk detectors remain limited by poor spectral…