Related papers: A Sliding Ferroelectric Resonant Tunnel Junction
Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of…
There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements.…
We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…
We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel…
Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection of magnetic…
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining…
Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…
The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of…
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…