Related papers: Optimizing CMOS-compatible, superconducting Titani…
Advancements in the fabrication of superconducting quantum devices have highlighted tantalum as a promising material, owing to its low surface oxidation microwave loss at low temperatures. However, tantalum films exhibit significantly…
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…
We have studied the superconducting behavior of 100 nm Titanium Nitride (TiN) thin film in a perpendicular magnetic field. We found a zero field transition temperature of 4.6 K and a slope in the H-T plane of -0.745 T/K. At 4.2 K, we have…
Silicon nitride (SiN) formed via low pressure chemical vapor deposition (LPCVD) is an ideal material platform for on-chip nonlinear photonics owing to its low propagation loss and competitive nonlinear index. Despite this, LPCVD SiN is…
Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterized thin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. By high-resolution scanning transmission…
Superconducting NbTiN thin films have garnered extensive interest due to their use in Superconducting Nanowire Single-Photon Detectors (SNSPDs) and other low-temperature applications for potential use in quantum computing and…
Herein, we report CeIrIn5 thin-film growth on a MgF2 (001) substrate using pulsed laser deposition technique. X-ray diffraction analysis showed that the thin films were either mainly a-axis-oriented (TF1) or a combination of a- and…
Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric…
Characterizing superconducting microwave resonators with highly dissipative elements is a technical challenge, but a requirement for implementing and understanding the operation of hybrid quantum devices involving dissipative elements, e.g.…
We investigate the performance of microwave-frequency phononic crystal resonators fabricated on thin-film lithium niobate for integration with superconducting quantum circuits. For different design geometries at millikelvin temperatures, we…
High-quality-factor ($Q$) mechanical resonators are essential components for precise sensing and control of mechanical motion at a quantum level. While amorphous materials such as SiN have been widely used in high-$Q$ mechanical resonators…
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an…
We investigate thin films of conducting aluminium-oxide, also known as granular aluminium, as a material for superconducting high quality, high kinetic inductance circuits. The films are deposited by an optimised reactive DC magnetron…
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect…
Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and…
Titanium Oxynitride (TiOxNy) thin films are fabricated using reactive magnetron sputtering. The mechanism of their growth formation is explained and their optical properties are presented. The films grown when the level of residual Oxygen…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic…
Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 {\deg}C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films…
The chemical deposition of high-performance Zinc Oxide (ZnO) thin films is challenging, thus significant efforts have been devoted during the past decades to develop cost-effective, scalable fabrication methods in gas phase. This work…
Temperature- and magnetic-field dependent measurements of the resistance of ultrathin superconducting TiN films are presented. The analysis of the temperature dependence of the zero field resistance indicates an underlying insulating…