Related papers: Mott Intermittency at the Metal-Insulator Boundary
For many layered metals the temperature dependence of the interlayer resistance has a different behavior than the intralayer resistance. In order to better understand interlayer transport we consider a concrete model which exhibits this…
We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard…
We study a spinless two-band model at half-filling in the limit of infinite dimensions. The ground state of this model in the non-interacting limit is a band-insulator. We identify transitions to a metal and to a charge-Mott insulator,…
We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…
We study the properties of a quarter-filled system of electrons on a square lattice interacting through a local repulsion $U$ and a nearest-neighbour repulsion $V$ in the limit $V=+\infty$. We identify the ground-state for $U$ large enough…
Electronic phase separation consisting of the metallic and insulating domains with 50 -- 100 $\mu$m in diameter is found in the organic Mott system $\kappa$-[($h$8-BEDT-TTF)$_{1-x}$($d$8-BEDT-TTF)$_{x}$]$_{2}$Cu[N(CN)$_{2}$]Br by means of…
For continuous Mott metal-insulator transitions in layered two dimensional systems, we demonstrate the phenomenon of dimensional decoupling: the system behaves as a three-dimensional metal in the Fermi liquid side but as a stack of…
Peculiarities of transport properties of three- and two-dimensional half-metallic ferromagnets are investigated, which are connected with the absence of spin-flip scattering processes. The temperature and magnetic field dependences of…
We explain in a consistent manner the set of seemingly conflicting experiments on the finite temperature Mott critical point, and demonstrate that the Mott transition is in the Ising universality class. We show that, even though the…
In many cases inhomogeneities are known to exist near the metal (or superconductor)- insulator transition, as follows from well-known domain-wall arguments. If the conducting regions are large enough, and if they have superconducting…
The Boson-Fermion model, describing a mixture of tightly bound electron pairs and quasi-free electrons hybridized with each other via a charge exchange term, is studied in the limit of infinite dimensions, using the Non-Crossing…
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…
We study the magnetotransport in a minimal holographic setup of a metal-insulator transition in two spatial dimensions. Some generic features are obtained without referring to the non-linear details of the holographic theory. The…
We argue that a three dimensional electronic system with the Fermi level at the quadratic band touching point such as HgTe could be unstable with respect to the spontaneous formation of the (topological) Mott insulator at arbitrary weak…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator…
If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…
High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…