Related papers: Coupling nitrogen vacancy centers in silicon carbi…
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…
The recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into…
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon…
An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Here, we report on the integration of near-transform-limited…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic…
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…
The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent…
Optically-addressable solid-state spin defects are promising candidates for storing and manipulating quantum information using their long coherence ground state manifold; individual defects can be entangled using photon-photon interactions,…
Optically addressable spin defects in silicon carbide, including the neutral divacancy (VV$^0$) and the negative nitrogen-vacancy (NV$^-$), are among leading building blocks of solid-state quantum technologies. Integrating these defects…
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large…
Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing,…
Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical…