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Related papers: Disorder-driven stochastic dynamics in Mott resist…

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We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

Disordered Systems and Neural Networks · Physics 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

Micro- and nano-electromechanical resonators are a fundamental building block of modern technology, used in environmental monitoring, robotics, medical tools as well as fundamental science. These devices rely on dedicated electronics to…

The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…

Strongly Correlated Electrons · Physics 2009-03-11 Jan Kunes , Alexey V. Lukoyanov , Vladimir I. Anisimov , Richard T. Scalettar , Warren E. Pickett

We investigate the effects of weak to moderate disorder on the T=0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous…

Strongly Correlated Electrons · Physics 2010-05-18 E. C. Andrade , E. Miranda , V. Dobrosavljevic

We investigate the possibility of realizing a disorder-induced topological Floquet spectrum in two-dimensional periodically-driven systems. Such a state would be a dynamical realization of the topological Anderson insulator. We establish…

Disordered Systems and Neural Networks · Physics 2015-02-12 Paraj Titum , Netanel H. Lindner , Mikael C. Rechtsman , Gil Refael

Chaos is a fundamental phenomenon in nonlinear dynamics, manifesting as irregular and unpredictable behavior across various physical systems. Among the diverse routes to chaos, intermittent chaos is a distinct transition pathway,…

The magnetoresistance of thin superconducting strips subject to a perpendicular magnetic field B and low temperatures T manifests a sequence of alternating superconductor-insulator transitions (SIT). We study this phenomenon within a quasi…

Superconductivity · Physics 2013-05-29 Yeshayahu Atzmon , Efrat Shimshoni

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…

Strongly Correlated Electrons · Physics 2021-01-18 Chang-Yong Kim , Tetiana Slusar , Jinchul Cho , Hyun-Tak Kim

This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a…

The role of orbital ordering on metal-insulator transition of transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap on the orbital…

Strongly Correlated Electrons · Physics 2007-09-25 Dong-Meng Chen , Liang-Jian Zou

Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct…

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

Strongly Correlated Electrons · Physics 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

We investigate the possibility of using structural disorder to induce a topological phase in a solid state system. Using first-principles calculations, we introduce structural disorder in the trivial insulator BiTeI and observe the…

Materials Science · Physics 2021-06-30 Paul Corbae , Frances Hellman , Sinead M. Griffin

A 3D layered system of charges with logarithmic interaction parallel to the layers and random dipoles is studied via a novel variational method and an energy rationale which reproduce the known phase diagram for a single layer. Increasing…

Condensed Matter · Physics 2016-08-31 Baruch Horovitz , Pierre Le Doussal

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim…

Materials Science · Physics 2020-04-29 P. Ganesh , Frank Lechermann , Ilkka Kylanpaa , Jaron Krogel , Paul R. C. Kent , Olle Heinonen

VO$_{2}$ is a model material system which exhibits a metal to insulator transition at 67$^\circ$C. This holds potential for future ultrafast switching in memory devices, but typically requires a purely electronic process to avoid the slow…

The dynamical control of energy transfer between interacting systems is fundamental in diverse applications related to physical, electronic and chemical processes. Recent developments show that noise may enhance or suppress power transfer…

Optics · Physics 2021-03-19 P. Bravo-Cassab , B. Jaramillo-Ávila , B. M. Rodríguez-Lara

Biological neurons receive multiple noisy oscillatory signals, and their dynamical response to the superposition of these signals is of fundamental importance for information processing in the brain. Here we study the response of neural…

Neurons and Cognition · Quantitative Biology 2017-08-28 Daqing Guo , Matjaz Perc , Yangsong Zhang , Peng Xu , Dezhong Yao

We discuss the effects of disorder in time-reversal invariant topological insulators and superconductors in three spatial dimensions. For three-dimensional topological insulator in symplectic (AII) symmetry class, the phase diagram in the…

Mesoscale and Nanoscale Physics · Physics 2013-05-30 Shinsei Ryu , Kentaro Nomura

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…

Strongly Correlated Electrons · Physics 2008-09-27 T. Ferrus , R. George , C. H. W. Barnes , N. Lumpkin , D. J. Paul , M. Pepper