Related papers: Re-evaluating photoluminescent defects in Cu$_2$O
The electronic and optical properties of low-dimensional semiconductors are typically quite different from those of their bulk counterparts. Yet, the optical gap of two-dimensional copper antimony disulfide (CuSbS$_2$) does not dramatically…
The real part of the optical in-plane conductivity of p-- and n--type cuprates thin films at various doping levels was deduced from highly accurate reflectivity measurements. We present here a comprehensive set of optical spectral weight…
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and…
We show that new low-energy photoluminescence (PL) bands can be created in semiconducting single-walled carbon nanotubes by intense pulsed excitation. The new bands are attributed to PL from different nominally dark excitons that are…
Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict…
Despite decades of progress, an understanding of unconventional superconductivity still remains elusive. An important open question is about the material dependence of the superconducting properties. Using the quasiparticle self-consistent…
The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…
Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of…
The p-type semiconductor Cu3PSe4 has recently been established to have a direct bandgap of 1.4 eV and an optical absorption spectrum similar to GaAs [Applied Physics Letters, 99, 181903 (2011)], suggesting a possible application as a solar…
Organic - inorganic heterostructures (HS) combine the strong light absorption and exciton generation capabilities of organic molecules with the unique excitonic properties of layered transition metal dichalcogenides (TMDs), where the…
Defect engineering using self-doping or creating vacancies in polycrystalline oxide based materials has profound influence on optical absorption, UV photo detection, and electrical switching. However, defects induced semiconducting oxide…
The Cu-deficient CuxInSe2 (x larger than 0.3) phase can be stabilized as a thin film. A uniform Cu-deficient composition with a chalcopyrite structure was obtained by the precision engineering of a two-step synthesis process involving…
Photonic crystal materials are based on a periodic modulation of the dielectric constant on length scales comparable to the wavelength of light. These materials can exhibit photonic band gaps; frequency regions for which the propagation of…
The electronic transport through Au-(Cu$_{2}$O)$_n$-Au junctions is investigated using first-principles calculations and the nonequilibrium Green's function method. The effect of varying the thickness (i.e., $n$) is studied as well as that…
Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit…
Charge-transfer excitations are of paramount importance for understanding the electronic structure of copper-oxide based high-temperature superconductors. In this study, we investigate the response of a Bi$_2$Sr$_2$CaCu$_2$O$_{\mathrm{8}+…
Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of…
The internal luminescence quantum efficiency ($Q_\mathrm{i}^\mathrm{lum}$) provides an excellent assessment of the optoelectronic quality of semiconductors. To determine $Q_\mathrm{i}^\mathrm{lum}$ of perovskite films from the…
The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman…