The p-type semiconductor Cu3PSe4 has recently been established to have a direct bandgap of 1.4 eV and an optical absorption spectrum similar to GaAs [Applied Physics Letters, 99, 181903 (2011)], suggesting a possible application as a solar photovoltaic absorber. Here we calculate the thermodynamic stability, defect energies and concentrations, and several material properties of Cu3PSe4 using a wholly GGA+U method (the generalized gradient approximation of density functional theory with a Hubbard U term included for the Cu-d orbitals). We find that two low energy acceptor-type defects, the copper vacancy V_Cu and the phosphorus-on-selenium antisite P_Se, establish the p-type behavior and likely prevent any n-type doping near thermal equilibrium. The GGA+U defect calculation method is shown to yield more accurate results than the more standard method of applying post-calculation GGA+U-based bandgap corrections to strictly GGA defect calculations.
@article{arxiv.1209.5763,
title = {Defect physics and electronic properties of Cu3PSe4 from first principles},
author = {D. H. Foster and F. L. Barras and J. M. Vielma and G. Schneider},
journal= {arXiv preprint arXiv:1209.5763},
year = {2015}
}