The basic properties of point defects (atomic geometry, the position of charge-transfer levels, and formation energies) on the (110) surface of GaAs, GaP, and InP have been calculated employing density-functional theory. Based on these results we discuss the electronic properties of surface defects, defect segregation, and compensation.
@article{arxiv.cond-mat/0010342,
title = {Point defects on III-V semiconductor surfaces},
author = {G. Schwarz and J. Neugebauer and M. Scheffler},
journal= {arXiv preprint arXiv:cond-mat/0010342},
year = {2007}
}
Comments
4 pages including figures. Submitted to Proceedings of the ICPS 25, Osaka, 17-22 September 2000. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.html