Related papers: Surface-State-Driven Anomalous Hall Effect in Alte…
The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to…
The topological kagome magnet (TKM) Fe3Sn2 exhibits unusual topological properties, flat electronic bands, and chiral spin textures, making it an exquisite materials platform to explore the interplay between topological band structure,…
To elucidate the origin of anomalous Hall effect (AHE) in ferromagnetic transition metals, we study the intrinsic AHE based on a multi-orbital (xz,yz)-tight-binding model. We find that a large anomalous velocity comes from the off-diagonal…
Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…
The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the…
We have investigated magnetotransport properties and the topological electronic structure of the half-Heusler compound TbPtBi. Our experiments reveal an exceptionally large anomalous Hall effect (AHE) in the canted antiferromagnetic state…
Researches on anomalous Hall effect (AHE) have been lasting for a century to make clear the underlying physical mechanism. Generally, the AHE appears in magnetic materials, in which extrinsic process related to scattering effects and…
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…
The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to…
Since Edwin Halls groundbreaking discovery of the Hall effect in 1879, magnetism, spin, and quantization have been expanding the scope of Hall effects, continuously driving transformative progress in science and technology. Among them, the…
Altermagnetism refers to a wide class of magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetries, resulting in non-trivial spin splitting and magnetic multipoles. However, the direct observation…
Anomalous Hall effect (AHE), one of the most important electronic transport phenomena, generally appears in ferromagnetic materials but is rare in materials without magnetic elements. Here, we present a study of La$_3$MgBi$_5$, whose band…
We present a study of electric, thermal and thermoelectric response in noncollinear antiferromagnet Mn$_{3}$Sn, which hosts a large Anomalous Hall Effect (AHE). Berry curvature generates off-diagonal thermal(Righi-Leduc) and…
The altermagnetic materials have emerged as model systems for studying spin split electronic structures, yet controlled epitaxial growth on technologically relevant substrates remains challenging. Among the known candidates, MnTe stands out…
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction.…
Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed…
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn,…
The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic…
We report on the first example of epitaxial Mn$_{3 + \delta}$Ge thin films with a cubic $L1_2$ structure. The films are found to exhibit frustrated ferromagnetism with an average magnetization corresponding to 0.98$~\pm~$0.06$~\mu_B$/Mn,…