Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors

Yong Pu; Daichi Chiba; Fumihiro Matsukura; Hideo Ohno; Jing Shi

doi:10.1103/PhysRevLett.101.117208

Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors

Mesoscale and Nanoscale Physics 2008-09-12 v2 Materials Science

Authors: Yong Pu , Daichi Chiba , Fumihiro Matsukura , Hideo Ohno , Jing Shi

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Abstract

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.

Keywords

anomalous Hall effect anomalous Nernst effect Mott relation ferromagnetic semiconductor Ga1-xMnxAs spin-orbit interaction

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@article{arxiv.0807.4942,
  title  = {Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors},
  author = {Yong Pu and Daichi Chiba and Fumihiro Matsukura and Hideo Ohno and Jing Shi},
  journal= {arXiv preprint arXiv:0807.4942},
  year   = {2008}
}

Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors

Abstract

Keywords

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