Related papers: Gain-Layer Project
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
There is a growing interest in obtaining high quality monolayer transition metal disulfides (TMDSs) for optoelectronic device applications. Surface chemical treatments using a range of chemicals on monolayer TMDSs have proven effective to…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
A closed-form approximate expression is presented for the short time-frame development of silicon diode sensor signals in the context of high frame-rate detection of incident X-ray fluxes, in the limit that the X-ray absorption profile…
Current and next-generation particle tracking detectors will incorporate precision timing capabilities with resolutions approaching tens of picoseconds. Using Technology Computer-Aided Design (TCAD) simulations of Low-Gain Avalanche Diode…
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130…
Gadolinium is widely used in multiple low-background experiments, making its isotopes accessible for rare decay searches both in-situ and through radiopurity screening data. This study presents an improved search for rare alpha and…
Silicon detectors typically require an insensitive area around their periphery to accommodate guard rings, which help maintain the electric field uniformity around edge pixels and isolate the high leakage current from the physical edges of…
The applications of optical links in collider experiments provide the advantage of high-speed data transmission with low mass fibers over distances of a few hundred meters. Ge-doped multi-mode fibers are evaluated for radiation tolerance in…
Previously, we had proposed an optically-pumped five-level Gain EIT (GEIT) system, which has a transparency dip superimposed on a gain profile and exhibits a negative dispersion suitable for the white-light-cavity signal-recycling (WLC-SR)…
Optical limiters transmit low-intensity light, while blocking laser radiation with excessively high intensity or fluence. A typical passive optical limiter absorbs most of the high level radiation, which can cause irreversible damage. In…
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…
Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is…
Graphene as a single-atomic-layer material is fully exposed to environment and has therefore a great potential for creating of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to…
The high-luminosity LHC (HL-LHC) upgrade is setting now a new challenge for particle detector technologies. The increase in luminosity will produce a particle background in the gas-based muon detectors that is ten times higher than under…
Aging phenomena constitute one of the most complex and serious potential problems which could limit, or severely impair, the use of gaseous detectors in unprecedented harsh radiation environments. Long-term operation in high-intensity…
Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode…
Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $\Phi_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to…
The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias…
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $\mu$m. This prototype is formed by a…