Related papers: High-Frequency Switching in Superparamagnetic Magn…
We study switching current distributions in superconducting nanostrips using theoretical models and numerical simulations. Switching current distributions are commonly measured in experiments and may provide a window into the microscopic…
We experimentally investigate the electronic transport properties of a three-terminal graphene Josephson junction. We find that self-heating effects strongly influence the behaviour of this multiterminal Josephson junction (MTJJ) system. We…
We show that fermionic high-spin systems with spin-changing collisions allow to monitor superexchange processes in optical superlattices with large amplitudes and strong spin fluctuations. By investigating the non-equilibrium dynamics, we…
When a constriction is realized in a 2D quantum spin Hall system, electron tunneling between helical edge states occurs via two types of channels allowed by time-reversal symmetry, namely spin-preserving ({p}) and spin-flipping ({f})…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
We study the spin fluctuations of pure and Zn-substituted high temperature superconductors (HTS) using the muon spin relaxation (muSR) technique. Superconductivity is found to coexist with low frequency spin fluctuations over a large region…
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…
Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological…
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…
Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the…
We theoretically investigate the escape rate occurring via quantum tunneling in a system affected by tailored dissipation. Specifically, we study the environmental assisted quantum tunneling of the superconducting phase in a current-biased…
We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions,…
We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic…
Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…
High-quality random numbers are very critical to many fields such as cryptography, finance, and scientific simulation, which calls for the design of reliable true random number generators (TRNGs). Limited by entropy source, throughput,…
Exerting control of the magnetic exchange interaction in heterostructures is of both basic interest and has potential for use in spin-based applications relying on quantum effects. We here show that the sign of the exchange interaction in a…
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…
Damping in magnetization dynamics characterizes the dissipation of magnetic energy and is essential for improving the performance of spintronics-based devices. While the damping of ferromagnets has been well studied and can be artificially…
Low-energy random number generation is critical for many emerging computing schemes proposed to complement or replace von Neumann architectures. However, current random number generators are always associated with an energy cost that is…