Related papers: High-Frequency Switching in Superparamagnetic Magn…
Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
Damping effects form the core of many emerging concepts for high-speed spintronic applications. Important characteristics such as device switching times and magnetic domain-wall velocities depend critically on the damping rate. While the…
Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy. However, the requirement of an external magnetic…
We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…
A crossover at a temperature T* in the temperature dependence of the width s of the distribution of switching currents of moderately damped Josephson junctions has been reported in a number of recent publications, with positive ds/dT and IV…
Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it is featured by high speed, low power, nearly unlimited…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the Linear, Gaussian, Lorentzian, and P\"oschl-teller width and height based profiles manifesting a sizable enhancement in the TMR($\approx…
We theoretically investigate the supercurrent flow in a Josephson junction consisting of two spin-split superconductors combined by a normal metal weak link. The normal metal may be driven out of equilibrium, thus modifying the electron and…
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that…
In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar…
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how…
One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…
In the superparamagnetic regime, magnetic tunnel junctions switch between two resistance states due to random thermal fluctuations. The dwell time distribution in each state is exponential. We sample this distribution using a temporal…