Related papers: Magnetization and anomalous Hall effect in SiO2/Fe…
Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with…
A series of Mn$_{100-x}$Rh$_x$ ($20 \le x \le 50$) thin films were epitaxially grown on the MgO substrate using magnetron sputtering technique, and were systematically investigated by magnetization, longitudinal electrical resistivity, and…
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using…
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…
The correlation between magnetic and structural properties of Co_{2} FeAl (CFA) thin films of different thickness (10 nm<d< 100 nm) grown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600\lyxmathsym{\textdegree}C…
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect…
A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data…
A single layer ferromagnetic film magnetized in the plane of an ac current flow, exhibits a characteristic Hall voltage with harmonic and second harmonic components, which is attributed to the presence of spin currents with polarization…
Achieving atomically flat and stoichiometric films of chiral antiferromagnets (AFM) with two-dimensional kagome spin lattice structures are crucial for integrating these materials in both established and emerging antiferromagnetic…
We investigated the structural and magnetic properties of bare SrRuO$_3$ (SRO) ultra-thin films and SrRuO$_3$/SrIrO$_3$/SrZrO$_3$ (SRO/SIO/SZO: RIZ) trilayer heterostructures between 10 K and 80 K, by comparing macroscopic data using…
The Heusler compound Co2MnGa is a topological semimetal with intriguing electronic and magnetic properties, making it a promising candidate for spintronic applications. This study systematically investigates the effects of substrate…
The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized L10-MnAl epitaxial films with variable orbital…
Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity and Hall resistivity and thermal transport ones…
We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel…
We report here the observation of robust thermoremanent magnetization (TRM) in Fe-intercalated TaS$_2$ single crystal Fe$_{x}$TaS$_2$, which develops upon cooling under a moderate magnetic field of 500 Oe or higher. The thermoremanence is…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion…
A wide variation in the disorder strength, as inferred from an order of magnitude variation in the longitudinal resistivity of Co2FeSi (CFS) Huesler alloy thin films of fixed (50 nm) thickness, has been achieved by growing these films on…
The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale…
The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR)…