Related papers: Multi-level charge fluctuations in a Si/SiGe doubl…
We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
We show that charge noise $S_Q$ in Josephson qubits can be produced by fluctuating two level systems (TLS) with electric dipole moments in the substrate using a flat density of states. At high frequencies the frequency and temperature…
Understanding and suppressing sources of decoherence is a leading challenge in building practical quantum computers. In superconducting qubits, low frequency charge noise is a well-known decoherence mechanism that is effectively suppressed…
We theoretically study the relaxation of electron orbital states of a double quantum dot system due to two-phonon processes. In particular, we calculate how the relaxation rates depend on the separation distance between the quantum dots,…
We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that of electron transport in a quantum dot with two charge…
Fluctuations of conserved quantities within a subsystem are non-local observables that provide unique insights into quantum many-body systems. In this paper, we study bipartite charge (and spin) fluctuations across interaction-driven…
Unwanted fluctuations over time, in short, noise, are detrimental to device performance, especially for quantum coherent circuits. Recent efforts have demonstrated routes to utilizing magnon systems for quantum technologies, which are based…
Advances in nanomechanics within recent years have demonstrated an always expanding range of devices, from top-down structures to appealing bottom-up MoS$_2$ and graphene membranes, used for both sensing and component-oriented applications.…
When a system is thermally coupled to only a small part of a larger bath, statistical fluctuations of the temperature (more precisely, the internal energy) of this "sub-bath" around the mean temperature defined by the larger bath can become…
We report an experimentally observed anomalous doubly split spectrum and its split-width fluctuation in an ultrastrongly coupled superconducting qubit and resonator. From an analysis of Rabimodel and circuit model Hamiltonians, we found…
Parasitic two-level-system (TLS) defects are one of the major factors limiting the coherence times of superconducting qubits. Although there has been significant progress in characterizing basic parameters of TLS defects, exact mechanisms…
Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges.…
Solid-state qubits are sensitive to their microscopic environment, causing the qubit properties to fluctuate on a wide range of timescales. The sub-Hz end of the spectrum is usually dealt with by repeated background calibrations, which…
We consider charge fluctuations in a quantum dot coupled to an interacting one-dimensional electron liquid. We find the behavior of this system to be similar to the multichannel pseudogap Kondo model. By tuning the coupling between the dot…
The study of charge current fluctuations (noise) can give useful insights into the properties of nanoscale systems. In this work, the peculiar properties of noise in multiterminal hybrid normal-superconducting systems are explored in the…
Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities.…
We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…
Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study…