Related papers: Multi-level charge fluctuations in a Si/SiGe doubl…
Quantum mechanics can strongly influence the noise properties of mesoscopic devices. To probe this effect we have measured the current fluctuations at high-frequency (5-90 GHz) using a superconductor-insulator-superconductor tunnel junction…
We investigate experimentally the quantum coherence of an electronic two-level system in a double quantum dot under continuous charge detection. The charge-state of the two-level system is monitored by a capacitively coupled single quantum…
In this thesis I find an analytic expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of an island are all of the same order. I also study the correction to the…
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to…
We propose a measurement set-up for detecting quantum noise over a wide frequency range using inelastic transitions in a tunable two-level system as a detector. The frequency-resolving detector consists of a double quantum dot which is…
Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the…
Spin qubits in semiconductor quantum dots are one of the promizing devices to realize a quantum processor. A better knowledge of the noise sources affecting the coherence of such a qubit is therefore of prime importance. In this work, we…
Superconducting microwave resonators are critical to quantum computing and sensing technologies. Additionally, they are common proxies for superconducting qubits when determining the effects of performance-limiting loss mechanisms such as…
We investigate bias-driven non-equilibrium quantum phase transitions in a paradigmatic quantum-transport setup: an interacting quantum dot coupled to non-interacting metallic leads. Using the Random Phase Approximation, which is exact in…
We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM).…
Based on the scattering matrix theory and non-equilibrium green function method, we have investigated the fluctuations of charge and spin current of the systems which consists of a quantum dot (QD) with a resonant level coupled to two…
Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach…
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device…
The effects of a collection of classical two-level charge fluctuators on the coherence of a dynamically-decoupled qubit are studied. Distinct dynamics are found at different qubit working positions. Exact analytical formulae are derived at…
Qubit noise and fluctuations of the noise over time are key factors limiting the performance of quantum computers. Characterising them with high temporal resolution is challenging due to multiple overlapping stochastic processes such as…
We present the first observation of dynamically modulated quantum phase transition (QPT) between two distinct charge density wave (CDW) phases in 2-dimensional 2H-NbSe$_2$. There is recent spectroscopic evidence for the presence of these…
Superconducting quantum computing is experiencing a tremendous growth. Although major milestones have already been achieved, useful quantum-computing applications are hindered by a variety of decoherence phenomena. Decoherence due to…
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and…
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the…
The analysis of charge noise based on the Bloch-Redfield treatment of an ensemble of dissipative two-level fluctuators generally results in a violation of the fluctuation-dissipation theorem. The standard Markov approximation (when applied…