Related papers: Magnetic exchange coupled nonreciprocal devices fo…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the…
The demand for cryogenic memory components is driven by the need for ultra-fast, low-power, and highly reliable computing systems. Phase slip-based devices promise to fulfill all these requirements, with potential applications in both…
Superconducting (SC) diodes are key passive building blocks for future SC electronics. However, realizing their active counterparts is essential for functional logic. Here, we demonstrate deterministic nonvolatile electrical switching of…
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
Superconductor digital electronics using Josephson junctions as ultrafast switches and magnetic-flux encoding of information was proposed over 30 years ago as a sub-terahertz clock frequency alternative to semiconductor electronics based on…
The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and…
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many…
The demand for high-density data storage with ultrafast accessibility motivates the search for new memory implementations. Ideally such storage devices should be robust to input error and to unreliability of individual elements; furthermore…
We report the fabrication and testing, at 4.2 K, of an SISFS device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top…
If a computer could be assembled from superconducting components, the energy efficiency would far surpass that of conventional electronics. Historic research efforts towards this goal yielded pivotal breakthroughs in the development and…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…