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Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…

Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…

Materials Science · Physics 2016-03-15 Li Ming Loong , Wonho Lee , Xuepeng Qiu , Ping Yang , Hiroyo Kawai , Mark Saeys , Jong-Hyun Ahn , Hyunsoo Yang

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…

Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally non-volatile long-term plasticity changes have been implemented in nanoelectronic synapses for neuromorphic…

Emerging Technologies · Computer Science 2017-12-20 Abhronil Sengupta , Kaushik Roy

Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…

Other Condensed Matter · Physics 2025-12-09 Maksim Stebliy , Alex Jenkins , Luana Benetti , Ricardo Ferreira

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…

Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…

The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…

Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…

Emerging Technologies · Computer Science 2017-07-18 S. Dey Manasi , M. M. Al Rashid , J. Atulasimha , S. Bandyopadhyay , A. R. Trivedi

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

Mesoscale and Nanoscale Physics · Physics 2025-03-04 Supriyo Bandyopadhyay

Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at…

Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…

This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to…

Applied Physics · Physics 2025-06-10 Steven Louis , Hannah Bradley , Cody Trevillian , Andrei Slavin , Vasyl Tyberkevych

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…

Materials Science · Physics 2017-03-08 Jun-Yang Chen , Li He , Jian-Ping Wang , Mo Li

The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents.…

Bio-inspired hardware holds the promise of low-energy, intelligent and highly adaptable computing systems. Applications span from automatic classification for big data management, through unmanned vehicle control, to control for bio-medical…

Emerging Technologies · Computer Science 2016-07-18 Julie Grollier , Damien Querlioz , Mark D. Stiles

We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…

Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of…

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