Related papers: Bio-resorbable magnetic tunnel junctions
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…
There is a growing demand for highly-performant memories and memristive technologies for use in in-memory computing. Magnetic tunnel junctions (MTJs) have thus far addressed this need in the field of spintronics. Despite their low write…
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 372, 1458; 2021, 372, 1462), which paves a new way to realize…
We presents a new strategy to create a van der Waals-based magnetic tunnel junction (MTJ) that consists of a three-atom layer thickness of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) by introducing a monoatomic Boron vacancy…
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW)…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
Dilute Mg-Zn wires are of great interest for biodegradable small-bone fixation, as magnesium degradation can support bone-related processes, while low zinc additions may provide biological benefits without compromising biocompatibility. In…
Deep Spiking Neural Networks are becoming increasingly powerful tools for cognitive computing platforms. However, most of the existing literature on such computing models are developed with limited insights on the underlying hardware…
Recent studies have shown that nonlinear magnetization dynamics excited in nanostructured ferromagnets are applicable to brain-inspired computing such as physical reservoir computing. The previous works have utilized the magnetization…
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are…
We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…
Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present…
We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The…
CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical…