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Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for developing efficient optical and (opto)electronic devices which…
Second-order optical processes lead to a host of applications in classical and quantum optics. With the enhancement of parametric interactions that arise due to light confinement, on-chip implementations promise very-large-scale photonic…
Their outstanding electrical and optical properties make semiconducting single-walled carbon nanotubes (SWCNTs) highly suitable for charge transport and emissive layers in near-infrared optoelectronic devices. However, the luminescence…
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects…
A key issue in the use of high-power mid-infrared (Mid-IR) laser sources for a plethora of applications is the investigation of the exciting laser driven physical phenomena taking place in materials coated with dielectric films. Here, we…
Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embedded within the polycrystalline (ASH) layer formed on the Si…
Presence of bound pairs (excitons) in a low-temperature electron-hole plasma is accounted for by including correlation between fermions at the ladder level. Using a simplified one-dimensional model with on-site Coulomb interaction, we…
Efficient generation of charge carriers from a metallic surface is a critical challenge in a wide variety of applications including vacuum microelectronics and photo-electrochemical devices. Replacing semiconductors with vacuum/gas as the…
When redox active molecules are covalently tethered to the surface of the n-doped silicon, light induces their oxidation by the semiconductor. To visualize this charge separation we have followed the formation and decay of the surface…
Plasma effect is observed in CCDs exposed to heavy ionizing alpha-particles with energies in the range 0.5 - 5.5 MeV. The results obtained for the size of the charge clusters reconstructed on the CCD pixels agrees with previous measurements…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…
We study the dispersion properties of surface plasmon oscillations in a semi-bounded semiconductor plasma with the effects of the Coulomb exchange force associated with the spin polarization of electrons and holes as well as the effects of…
The propagation mechanisms of plasma streamers have been observed and investigated in a surface dielectric barrier discharge (SDBD) using 2D particle in cell simulations. The investigations are carried out under a simulated air mixture,…
We have theoretically studied oblique surface waves (OSWs) which propagate along the interface between a dielectric and a layered superconductor. We assume that this interface is perpendicular to the superconducting layers, and OSWs at the…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
Higher resolution demands for semiconductor lithography may be fulfilled by higher numerical aperture (NA) systems. However, NAs more than the photoresist refractive index (~1.7) cause surface confinement of the image. In this letter we…
Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol-gel films, have been achieved. Phonon-assisted band-to-band emission from coated…
Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum…
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at…
Optical metasurfaces can manipulate electromagnetic waves in unprecedented ways at ultra-thin engineered interfaces. Specifically, in the mid-infrared (mid-IR) region, metasurfaces have enabled numerous biochemical sensing, spectroscopy,…