Related papers: Electrically induced ferromagnetism in an irradiat…
We report on resistivity measurements in La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ and Nd$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films in order to elucidate the underlying mechanism for the CMR behavior. The experimental results are analyzed in terms of…
Charge transfer induced interfacial ferromagnetism and its impact on the exchange bias effect in La$_{0.7}$Sr$_{0.3}$MnO$_3$/NdNiO$_3$ correlated oxide heterostructures were investigated by soft x-ray absorption and x-ray magnetic circular…
Modulation of charge carrier dynamics and hence electrical conductivity of solids by photoexcitation has been a rich field of research with numerous applications. Similarly, electric and magnetic field assisted enhancement of conductivity…
Our single crystal study of the magneto-thermal and transport properties of the pyrochlore iridate Eu2Ir2O7 reveals a continuous phase transition from a paramagnetic metal to an antiferromagnetic insulator for a sample with stoichiometry…
In the manganites $RE_{1-x}AE_{x}$MnO$_{3}$ ($RE$ and $AE$ being rare-earth and alkaline-earth elements, respectively) the random distribution of $RE^{3+}$ and $AE^{2+}$ induces random, but correlated, shifts of site energies of charge…
Intrinsic magnetic topological insulators provide an ideal platform to achieve various exciting physical phenomena. However, this kind of materials and related research are still very rare. In this work, we reported the electronic and…
The layered compound BaCo1-xNixS2-y (0.05<x<0.2 and 0.05<y<0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around…
Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays.…
Epitaxial thin films of La0.7Ba0.3MnO3 manganite, deposited using Chemical Solution Deposition technique, were irradiated by 200 MeV Ag+15 ions with a maximum ion dose up to 1x10^12 ions/cm2. Temperature- and magnetic field-dependent…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
Resistivity under pressure and magnetization measurements on Ba$_{1-x}$Sr$_x$VS$_3$ single crystals with 0 $\leq x \leq$ 0.18 and no sulphur deficiency show an abrupt onset of ferromagnetic (FM) order at a critical value $x$=0.07,…
Of the perovskites, ABX_<3>, a subset of special interest is the family in which the A site is occupied by a lanthanide ion, the B site by a rare earth and X is oxygen, as such materials often exhibit a large change in electrical resistance…
We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to…
The recent observation of a insulator to metal transition (IMT) [I. Loa et al, PRL 87, 125501 (2001)] in pure LaMnO$_3$ at 32 GPa and room temperature, well above the Neel temperature (145 K) and below the Jahn-Teller transition temperature…
We have investigated the field-induced superconductivity-destroying quantum transition in amorphous indium oxide films at low temperatures down to 30 mK. It has been found that, on the high-field side of the transition, the…
In strongly correlated electronic systems, such as manganites, the global transport behavior depends sensitively on the spin ordering, whose alteration often requires a large external magnetic field. Here we show that the spin ordering in…
We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x <= 0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with…
By using intense coherent electromagnetic radiation, it may be possible to manipulate the properties of quantum materials very quickly, or even induce new and potentially useful phases that are absent in equilibrium. For instance, ultrafast…