Related papers: BARD: Reducing Write Latency of DDR5 Memory by Exp…

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests…

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests…

Phase-change memory (PCM) devices have multiple banks to serve memory requests in parallel. Unfortunately, if two requests go to the same bank, they have to be served one after another, leading to lower system performance. We observe that a…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

This paper summarizes the idea of Subarray-Level Parallelism (SALP) in DRAM, which was published in ISCA 2012, and examines the work's significance and future potential. Modern DRAMs have multiple banks to serve multiple memory requests in…

3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…

3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…

DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce DRAM access latency, their reduced storage capacities hinder the…

Predictable execution time upon accessing shared memories in multi-core real-time systems is a stringent requirement. A plethora of existing works focus on the analysis of Double Data Rate Dynamic Random Access Memories (DDR DRAMs), or…

In modern systems, DRAM-based main memory is significantly slower than the processor. Consequently, processors spend a long time waiting to access data from main memory, making the long main memory access latency one of the most critical…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and…

This article summarizes the idea of "refresh-access parallelism," which was published in HPCA 2014, and examines the work's significance and future potential. The overarching objective of our HPCA 2014 paper is to reduce the significant…

We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Counting (PRAC), described in JEDEC DDR5 specification's April 2024…

As SRAM-based caches are hitting a scaling wall, manufacturers are integrating DRAM-based caches into system designs to continue increasing cache sizes. While DRAM caches can improve the performance of memory systems, existing DRAM cache…

DRAM-based memory is a critical factor that creates a bottleneck on the system performance since the processor speed largely outperforms the DRAM latency. In this thesis, we develop a low-cost mechanism, called ChargeCache, which enables…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from Last Level Cache (LLC), which are frequently repeated, has become a major concern. The processor may stall for a…

Variation has been shown to exist across the cells within a modern DRAM chip. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the design and placement of different components in the DRAM…