Related papers: Time-resolved Charge Detection in Transition Metal…
Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…
The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2.…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many novel device concepts have been proposed and realized…
Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe$_2$ monolayers [J. Pack, et al.,…
Molybdenum Disulfide (MoS$_2$) has been recognized as a potential substitution of Platinum (Pt) for electrochemical hydrogen evolution reaction (HER). However, the broad adoption of MoS$_2$ is hindered by its limited number of active sites…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…
Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical…
In this article, we review recent work about time dependent quantum transport through a quantum dot in Kondo regime. This represents a major step towards designing next generation transistors that are expected to replace current MOSFET's in…
The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…
Moir\'e super-potentials in two-dimensional materials allow unprecedented control of the ratio between kinetic and interaction energy. By this, they pave the way to study a wide variety of strongly correlated physics under a new light. In…
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box…
The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the…
Transition metal dichalcogenide (TMD) bilayers have recently emerged as a robust and tunable moir\'e system for studying and designing correlated electron physics. In this work, by combining large-scale first principle calculation and…
We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS$_2$) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS$_2$ flakes are partially…
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…
Contact resistance of semiconducting transition metal dichalcogenides has been shown to decrease in lateral heterojunctions formed with their metallic phases but its origins remain elusive. Here we combine first principles and quantum…
Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and…
The thermal conductivities of MoS2 and WS2 have been reported by some experimental and theoretical studies, however, the results are different from each other. Here, thermal transport properties of twelve types of single layer transition…
Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To…