Related papers: Quantum Hall effect in lightly hydrogenated graphe…
In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
Strong Goos-H\"anchen (GH) effect at a prism-graphene interface in the quantum Hall effect (QHE) condition is reported. Based on the full quantum description of the temperature-dependent surface conductivity of graphene present in the…
Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian…
Recent experimental and theoretical development in the Quantum Hall effect in monolayer graphene showed that the previous model of the valley-anisotropy interaction is incomplete, as it was assumed to be ultra-short range (USR). In this…
We present a theoretical framework to describe the integer quantum Hall effect (IQHE) in three-dimensional (3D) electron systems. This extends our previous single-electron approach, which was successfully applied to two-dimensional (2D)…
We derive the single-particle eigenenergies and eigenfunctions for massless Dirac fermions confined to the surface of a sphere in the presence of a magnetic monopole, i.e., we solve the Landau level problem for electrons in graphene on the…
In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a…
Recent studies on cavity-coupled two-dimensional electron gas demonstrate that vacuum-field engineering can tailor electronic transport properties of materials. By achieving ultra-strong coupling between a terahertz resonator and mesoscopic…
We show that, when graphene is subjected to an appropriate one-dimensional external periodic potential, additional branches of massless fermions are generated with nearly the same electron-hole crossing energy as that at the original Dirac…
We study the quantum Hall effect inside a gravitational field. First, we review the influence of the gravitational field of the Earth on the quantum Hall effect. Taking the gravitational field of the Earth to be uniform along the vertical…
We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…
When a graphene layer is stressed, the strain alters the phase an electron accumulates hopping between sites in a way that can be modeled as arising from a pseudo-magnetic vector potential. We examine the case of an oscillating graphene…
Low-energy electronic states in monolayer and bilayer graphenes present chiral charge carriers with unique and unusual properties of interest for electronic applications. Here, we report the magnetotransport measurements in the ABC-stacked…
We study the discrete energy spectrum of curved graphene sheets in the presence of a magnetic field. The shifting of the Landau levels is determined for complex and realistic geometries of curved graphene sheets. The energy levels follow a…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…
We derive an analytic expression for the geometric Hall viscosity of non-interacting electrons in a single graphene layer in the presence of a perpendicular magnetic field. We show that a recently-derived formula in [C. Hoyos and D. T. Son,…
A close study is made of the static structure factor for graphene in a magnetic field at integer filling factors nu, with focus on revealing possible signatures of "relativistic" quantum field theory in the low-energy physics of graphene.…
The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the…
We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $\nu=\pm4$ and $\nu=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic…