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Brain-inspired computing proposes a set of algorithmic principles that hold promise for advancing artificial intelligence. They endow systems with self learning capabilities, efficient energy usage, and high storage capacity. A core concept…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are…
Advanced flexible electronics and soft robotics require the development and implementation of flexible functional materials. Magnetoelectric (ME) oxide materials can convert magnetic input into electric output and vice versa, making them…
Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non-volatile memory, MTJs have received substantial attention due to its CMOS compatibility, low power…
Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large…
Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new…
Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…
A Reflective Intelligent Surface (RIS) consists of many small reflective elements whose reflection properties can be adjusted to change the wireless propagation environment. Envisioned implementations require that each RIS element be…
With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin…
Unconventional computing explores multi-scale platforms connecting molecular-scale devices into networks for the development of scalable neuromorphic architectures, often based on new materials and components with new functionalities. We…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
We describe opportunities and challenges with wireless robotic materials. Robotic materials are multi-functional composites that tightly integrate sensing, actuation, computation and communication to create smart composites that can sense…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…