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We have fabricated Ce/Pd bilayers grown on the SiO$_2$ substrate by magnetron sputtering under ultrahigh vacuum. Usage of palladium layer on top of the Ce film appears to prevent effectively the sample oxidation. The thickness of the cerium…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
Photoemission spectroscopy is used to investigate the electronic structure of the newly discovered iron-based superconductors LaFeAsO_{1-x}F_x and LaFePO_{1-x}F_x. Line shapes of the Fe 2p core-level spectra suggest an itinerant character…
Alkali-metal (potassium) adsorption on FeSe thin films with thickness from two unit cells (UC) to 4-UC on SrTiO3 grown by molecular beam epitaxy is investigated with a low-temperature scanning tunneling microscope. At appropriate potassium…
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and…
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy…
The Fe-doped CuO thin films were deposited onto glass substrates by Spray pyrolysis technique. The structural, micro-structural, optical and electrical properties of the synthesized samples were investigated in details. The X-Ray…
The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x =…
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions…
Following a recently manifested guide of how to team up infrared transparency and high electrical conductivity within semimetal materials [C. Cui $et$ $al.$ Prog. Mater. Sci. 2023, 136, 101112], we evaluate an applicability of the calcium…
Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for…
Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser…
We investigate the lattice structure of heterostructures comprising of ferroelectric BaTiO$_3$ (BTO) thin films and BaBiO$_3$ (BBO), the insulating parent-compound of the high Tc superconductor. Motivated by theoretical predictions of…
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature…
Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…
In this study, we fabricate 5-30-nm-thick films of FeSe/STO using pulsed laser deposition (PLD). The grown films exhibit superconductivity with an onset $T_{\mathrm{c}}$ that is much higher than that of bulk FeSe under ambient pressure. The…
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…
We present experimental XMLD spectra measured on epitaxial (001)-oriented thin Co$_{2}$FeSi films, which are rich in features and depend sensitively on the degree of atomic order and interdiffusion from capping layers. Al- and Cr-capped…