Related papers: Mid-infrared intraband transitions in InAs colloid…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport…
Robust control over the carrier type is fundamental for the fabrication of nanocrystal-based optoelectronic devices, such as the p-n homojunction, but effective incorporation of impurities in semiconductor nanocrystals and its…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
The electronic continuum states of InAs/GaAs semiconductor quantum dots embedded in a GaAs/AlAs superlattice are theoretically investigated and the far infrared absorption spectra are calculated for a variety of structures and…
We report the temperature dependence of the infrared-visible conductivity of Pr(2-x)Ce(x)CuO(4) thin films. When varying the doping from a non-superconducting film (x = 0.11) to a superconducting overdoped film (x = 0.17), we observe, up to…
We studied the doping and temperature (T) dependence of the infrared (IR) response of Ba(Fe1-xCox)2As2 single crystals. We show that a weak band around 1000 cm-1, that was previously interpreted in terms of interaction of the charge…
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer…
Quantum dots have found applications across the semiconductor and biotechnology industries, improving energy efficiency, color purity, and imaging capability. However, the standard quantum dot relies on a heavy metal architecture, which has…
Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the…
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long…
InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different…
Fluorophores emitting in the NIR-IIb wavelength range (1.5 micron - 1.7 micron) show great potential for bioimaging due to their large tissue penetration. However, current fluorophores suffer from poor emission with quantum yields ~2% in…
Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much lower compared to the usual (100)-grown InAs dots.…
We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm…
Fiber-based long-haul quantum communication would greatly benefit from a robust and deterministically integrated source of quantum state. Here, we report the design, fabrication, and optical characterization of InAs/InP quantum dots in the…
The demand for fast mid-wave infrared photodetectors is fueled by high-rate free-space optical communication and optical frequency comb spectroscopy. To date, only a few multi-GHz photodetectors have shown sensitive room-temperature…
Current imaging scanning tunneling microscopy is used to observe the electronic wavefunctions in InAs/ZnSe core/shell nanocrystals. Images taken at a bias corresponding to the s conduction band state show that it is localized in the central…